蒙特卡罗方法
硅
无定形固体
材料科学
晶体硅
离子注入
退火(玻璃)
非晶硅
离子
统计物理学
辐射损伤
计算物理学
航程(航空)
分子物理学
结晶学
辐射
化学
物理
光学
光电子学
数学
复合材料
有机化学
统计
作者
W. Bohmayr,A. Burenkov,J. Lorenz,H. Ryssel,S. Selberherr
摘要
We present a new analytical model to predict the spatial location of amorphous phases in ion-implanted single-crystalline silicon using results of multidimensional Monte Carlo simulations. Our approach is based on the concept of the critical damage energy density. Additionally, the self-annealing of radiation damage during ion implantation is taken into account because this effect is crucial for a correct prediction of amorphization. Two aspects of self-annealing are considered, namely, the temperature and the spatial dependence. The latter is related to the local damage energy density, which is simulated by one-, two-, and three-dimensional modules of our Monte Carlo program MCIMPL of the technology CAD framework VISTA. Therefore, the formation and the shape of amorphous regions in single-crystalline silicon can be predicted as a result of Monte Carlo simulations of ion implantation. The suggested model accurately reproduces the results of direct microscopic observations (XTEM measurements) of amorphous layers in silicon after a silicon self-implantation, which are available for a temperature range of 82-296 K.
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