蚀刻(微加工)
材料科学
各向异性
硅
反应离子刻蚀
Crystal(编程语言)
活化能
干法蚀刻
表面能
分析化学(期刊)
各向同性腐蚀
化学
纳米技术
复合材料
光电子学
光学
色谱法
物理化学
物理
计算机科学
程序设计语言
图层(电子)
作者
Mitsuhiro Shikida,Kazuo Sato,Kenji Tokoro,Daisuke Uchikawa
出处
期刊:International Conference on Micro Electro Mechanical Systems
日期:1999-01-01
被引量:15
标识
DOI:10.1109/memsys.1999.746845
摘要
We compared the anisotropic etching properties of KOH and TMAH solutions. We used hemispherical specimens of single-crystal silicon on where surface whole crystallographic orientations appeared, in order to evaluate the etching properties as a function of the orientations. We carried out a series of the experiments using different concentrations of two etchants and different etching temperatures. The dependence of the etching rates on the orientation of the surface crystals significantly differed between the two etchants, in particular at orientations of (111) and (221) planes. We concluded that the two etchants have different etching mechanisms at least around these two plane orientations. The etching rates depended on the concentration of the etchants and the etching temperature. The concentration levels that maximize the etching rate were 25 wt.% for KOH and 20 wt.% for TMAH. The activation energy of the two etchants was about 0.6 eV. The effects of etchant circulation on the etching rates were significant in TMAH but not in KOH solution.
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