发光二极管
材料科学
光电子学
薄膜
亮度
二极管
量子效率
亮度
荧光粉
发光效率
光学
倒装芯片
纳米技术
图层(电子)
物理
胶粘剂
作者
O.B. Shchekin,J. E. Epler,T. A. Trottier,Tal Margalith,D. A. Steigerwald,M.O. Holcomb,P. Martin,Michael R. Krames
摘要
Data are presented on the operation of thin-film flip-chip InGaN∕GaN multiple-quantum-well light-emitting diodes (LEDs). The combination of thin-film LED concept with flip-chip technology is shown to provide surface brightness and flux output advantages over conventional flip-chip and vertical-injection thin-film LEDs. Performance characteristics of blue, white, and green thin-film flip-chip 1×1mm2 LEDs are described. Blue (∼441nm) thin-film flip-chip LEDs are demonstrated with radiance of 191mW∕mm2sr at 1A drive, more than two times brighter than conventional flip-chip LEDs. An encapsulated thin-film flip-chip blue LED lamp is shown to have external quantum efficiency of 38% at forward current of 350mA. A white lamp based on a YAG:Ce phosphor coated device exhibits luminous efficacy of 60lm∕W at 350mA with peak efficiency of 96lm∕W at 20mA and luminance of 38Mcd∕m2 at 1A drive current. Green (∼517nm) devices exhibit luminance of 37Mcd∕m2 at 1A.
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