A comparative study of the electrical properties of TiO2films grown by high-pressure reactive sputtering and atomic layer deposition

Oxide–semiconductor interface quality of high-pressure reactive sputtered (HPRS) TiO2 films annealed in O2 at temperatures ranging from 600 to 900 °C, and atomic layer deposited (ALD) TiO2 films grown at 225 or 275 °C from TiCl4 or Ti(OC2H5)4, and annealed at 750 °C in O2, has been studied on silicon substrates. Our attention has been focused on the interfacial state and disordered-induced gap state densities. From our results, HPRS films annealed at 900 °C in oxygen atmosphere exhibit the best characteristics, with Dit density being the lowest value measured in this work (5–6 × 1011 cm−2 eV−1), and undetectable conductance transients within our experimental limits. This result can be due to two contributions: the increase of the SiO2 film thickness and the crystallinity, since in the films annealed at 900 °C rutile is the dominant crystalline phase, as revealed by transmission electron microscopy and infrared spectroscopy. In the case of annealing in the range of 600–800 °C, anatase and rutile phases coexist. Disorder-induced gap state (DIGS) density is greater for 700 °C annealed HPRS films than for 750 °C annealed ALD TiO2 films, whereas 800 °C annealing offers DIGS density values similar to ALD cases. For ALD films, the studies clearly reveal the dependence of trap densities on the chemical route used.