光刻胶
抵抗
湿度
溶解
平版印刷术
相对湿度
化学
材料科学
光电子学
有机化学
气象学
物理
图层(电子)
作者
James A. Bruce,Sandra R. Dupuis,R. T. Gleason,H. G. Linde
出处
期刊:Journal of The Electrochemical Society
[The Electrochemical Society]
日期:1997-09-01
卷期号:144 (9): 3169-3174
被引量:5
摘要
This paper discusses the effect of varied humidity on lithographic performance during photoresist exposure. In the presence of water, exposure causes the sensitizer to be converted into acid; without water, a less soluble ester forms. The effect of humidity on the resist chemistry was measured using infrared spectroscopy. To completely convert the sensitizer to acid, humidities exceeding 40% were needed. At lower humidities, significant amounts of ester, rather than acid, were formed. The effect of humidity during exposure was also measured using lithographic techniques. As humidity decreased from 40 to 20%, the dissolution rate decreased by up to 65%, dose‐to‐clear (E0) increased by up to 25%, the dose‐to‐print increased by up to 15%, and contrast decreased by up to 10%. The magnitude of these effects was resist‐dependent. The time of equilibration of water into and out of the resist film was less than 30 s.
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