石墨烯
等离子体增强化学气相沉积
材料科学
化学气相沉积
纳米技术
超级电容器
等离子体
晶体管
电化学
电极
化学
电气工程
电压
工程类
物理化学
物理
量子力学
作者
Menglin Li,Donghua Liu,Dacheng Wei,Xuefen Song,Dapeng Wei,Andrew T. S. Wee
标识
DOI:10.1002/advs.201600003
摘要
Graphene and its derivatives hold a great promise for widespread applications such as field‐effect transistors, photovoltaic devices, supercapacitors, and sensors due to excellent properties as well as its atomically thin, transparent, and flexible structure. In order to realize the practical applications, graphene needs to be synthesized in a low‐cost, scalable, and controllable manner. Plasma‐enhanced chemical vapor deposition (PECVD) is a low‐temperature, controllable, and catalyst‐free synthesis method suitable for graphene growth and has recently received more attentions. This review summarizes recent advances in the PECVD growth of graphene on different substrates, discusses the growth mechanism and its related applications. Furthermore, the challenges and future development in this field are also discussed.
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