锡
电阻随机存取存储器
氢
材料科学
原子层沉积
分析化学(期刊)
光电子学
纳米技术
电极
化学
图层(电子)
物理化学
有机化学
冶金
作者
Yang Yin Chen,L. Goux,Johan Swerts,Michael Toeller,Christoph Adelmann,J. A. Kittl,M. Jurczak,G. Groeseneken,Dirk J. Wouters
出处
期刊:IEEE Electron Device Letters
[Institute of Electrical and Electronics Engineers]
日期:2012-04-01
卷期号:33 (4): 483-485
被引量:29
标识
DOI:10.1109/led.2012.2185212
摘要
We developed TiN\HfO 2 \TiN RRAM devices by using hydrogen-based plasma enhanced atomic layer deposition (PEALD) for the top-electrode TiN processing, demonstrating attractive bipolar switching properties (by positive RESET voltage to the PEALD TiN). Better endurance performance was gained as compared with cells having no hydrogen plasma treatment. The improved switching property is related to partial reduction in the stoichiometry ALD HfO 2 film, as indicated by electron recoil detection analysis. On the other hand, pure H 2 and NH 3 thermal annealing treatments were also utilized with the same purpose. However, neither of these treatments resulted in as good switching performances, which underlines the need of a plasma-based process to generate reactive H-based species able to controllably and partially reduce the HfO 2 layer.
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