CMOS芯片
逐次逼近ADC
消散
线性
前置放大器
模数转换器
电压基准
功率(物理)
重置(财务)
炸薯条
计算机科学
电子工程
物理
电压
电气工程
电容器
放大器
工程类
量子力学
金融经济学
经济
热力学
作者
Yan Zhu,Chi‐Hang Chan,U-Fat Chio,Sai‐Weng Sin,U Seng‐Pan,Rui P. Martins,Franco Maloberti
出处
期刊:IEEE Journal of Solid-state Circuits
[Institute of Electrical and Electronics Engineers]
日期:2010-06-01
卷期号:45 (6): 1111-1121
被引量:622
标识
DOI:10.1109/jssc.2010.2048498
摘要
A 1.2 V 10-bit 100 MS/s Successive Approximation (SA) ADC is presented. The scheme achieves high-speed and low-power operation thanks to the reference-free technique that avoids the static power dissipation of an on-chip reference generator. Moreover, the use of a common-mode based charge recovery switching method reduces the switching energy and improves the conversion linearity. A variable self-timed loop optimizes the reset time of the preamplifier to improve the conversion speed. Measurement results on a 90 nm CMOS prototype operated at 1.2 V supply show 3 mW total power consumption with a peak SNDR of 56.6 dB and a FOM of 77 fJ/conv-step.
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