材料科学
渗透(认知心理学)
晶体管
场效应晶体管
凝聚态物理
电导率
兴奋剂
电阻器
噪音(视频)
纳米技术
半导体
光电子学
电气工程
物理
电压
神经科学
人工智能
计算机科学
图像(数学)
生物
工程类
量子力学
作者
Tathagata Paul,Subhamoy Ghatak,Arindam Ghosh
出处
期刊:Nanotechnology
[IOP Publishing]
日期:2016-02-18
卷期号:27 (12): 125706-125706
被引量:18
标识
DOI:10.1088/0957-4484/27/12/125706
摘要
We have addressed the microscopic transport mechanism at the switching or on-off transition in transition metal dichalcogenide (TMDC) field-effect transistors (FET), which has been a controversial topic in TMDC electronics, especially at room temperature. With simultaneous measurement of channel conductivity and its slow time-dependent fluctuation (or noise) in ultra-thin WSe2 and MoS2 FETs on insulating SiO2 substrates, where noise arises from McWhorter-type carrier number fluctuations, we establish that the switching in conventional backgated TMDC FETs is a classical percolation transition in a medium of inhomogeneous carrier density distribution. From the experimentally observed exponents in the scaling of noise magnitude with conductivity, we observe unambiguous signatures of percolation in random resistor network, particularly in WSe2 FETs close to switching, which crosses over to continuum percolation at a higher doping level. We demonstrate a powerful experimental probe to the microscopic nature of near-threshold electrical transport in TMDC FETs, irrespective of the material detail, device geometry or carrier mobility, which can be extended to other classes of 2D material-based devices as well.
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