发光二极管
发光效率
电阻随机存取存储器
光电子学
材料科学
LED灯
光学
纳米技术
物理
电气工程
工程类
电压
图层(电子)
作者
Meng Qi,Liu Yang,Tao Sun,Runze Xu,Ziyu Lv,Ye Zhou,Su‐Ting Han
摘要
We developed a color-modulated light-emitting device (LED) by the integration of a p-GaN/n-ZnO heterojunction with reliable resistive random access memory (RRAM) and demonstrated a multi-function integrated device with the adjustable electroluminescence (EL) color by modulating the injection current according to the multiple resistance states. As a critical foundation of an integrated device, reliable operation was achieved by introducing an AlOx layer into HfOx RRAM as an adjustment of the resistive switching endurance. Eventually, the EL color of LED was effectively regulated by modulating the compliance current of RRAM. Thanks to the high uniformity, this modulated LED may be a promising candidate for the application of low-cost and high-density LED displays without complicated structures and techniques, and it can provide a feasible approach for the realization of multilevel resistance state feedback from varied EL color in the future.
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