Self-powered solar blind ultraviolet photodetector based on amorphous (In0.23Ga0.77)2O3/bixbyite (In0.67Ga0.33)2O3 heterojunction

Self-powered solar-blind ultraviolet photodetectors are considered for potential applications in secure communication and space detection. However, high-quality p-type wide bandgap semiconductors are nonexistent due to the self-compensation effect, which makes the design of p-n homojunction photodetectors a challenging proposition to date. In this work, a self-powered solar-blind ultraviolet photodetector is fabricated and discussed, based on a novel heterojunction of (InxGa1−x)2O3 ternary alloy films with two different compositions, which has a flexible design and can be easily fabricated for different applications. The heterojunction consists of an amorphous (In0.23Ga0.77)2O3 on the top of a bixbyite (In0.67Ga0.33)2O3 film prepared by radio frequency magnetron sputtering. The amorphous (In0.23Ga0.77)2O3/bixbyite (In0.67Ga0.33)2O3 heterojunction photodetector exhibits a responsivity of 5.78 mA/W, a detectivity of 1.69 × 1011 cm Hz1/2 W−1, and a high solar-blind UV (248 nm)/visible light (450 nm) rejection ratio of 1.39 × 103 at zero bias, suggesting decent spectral selectivity and high performance. The responsivity and peak wavelength of this photodetector can be tuned by the film thickness of the amorphous (In0.23Ga0.77)2O3. This work provides a new design for self-powered solar-blind UV detectors based on ternary alloy heterojunctions.