材料科学
光电探测器
响应度
光电子学
紫外线
纳米晶材料
纳米晶
异质结
纳米棒
量子效率
氮化镓
光子学
纳米技术
图层(电子)
作者
Yufei Tan,Qian Qiao,Tongyun Zhao,Shulong Chang,Zhenfeng Zhang,Jinhao Zang,Chaonan Lin,Yuanyuan Shang,Xun Yang,Jiawen Zhou,Xuan Yu,Xiaoming Yu,Kai-Kai Liu
标识
DOI:10.1016/j.jmst.2023.12.032
摘要
Zero-dimensional colloidal nanocrystals (NCs) of gamma-phased gallium oxide (γ-Ga2O3) were successfully synthesized using the sol-gel method, resulting in nanocrystals with high crystallinity. Heterojunction photodetectors were then constructed by employing spin-coating technology to deposit γ-Ga2O3 NCs film of varying thicknesses onto p-type GaN substrates. The resulting devices demonstrated self-power capability through a photovoltaic effect when exposed to ultraviolet light illumination. Notably, a device with a 300 nm thick active layer, annealed in 400 °C, exhibited a responsivity of 6.7 × 10–3 A W–1, a detectivity of 3.10 × 1011 Jones, and an external quantum efficiency of 3.2% under 254 nm light illumination at 0.16 mW cm–2, all without the need for an external power supply. These findings suggest promising practical applications for such photodetectors in single-point imaging systems. This study presents a straightforward and viable approach for developing high-performance and self-powered ultraviolet photodetectors based on zero-dimensional γ-Ga2O3 NCs, thereby opening up possibilities for various photonic systems and applications that do not rely on an external power supply.
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