材料科学
硅
蚀刻(微加工)
钝化
光电子学
丝网印刷
各向同性腐蚀
纳米技术
复合材料
图层(电子)
作者
Pradeep Padhamnath,Wookjin Choi,Gabby De Luna,John Derek Arcebal,A. Rohatgi
标识
DOI:10.1016/j.solmat.2023.112351
摘要
We present SERIS' biPoly™ technology platform on large-area (M2), n-type rear-junction silicon solar cells featuring selective poly-Si/SiOx based passivated contacts on the front side and full-area poly-Si/SiOx contacts on the rear. The selective poly-Si 'fingers' are formed using an industrial ink-jet masking process followed by wet-chemical etching. The metal contacts are formed by an industrial screen-printing process using high-temperature fire-though metal pastes. We obtain excellent passivation on the front and rear surfaces, resulting in iVoc values between 720 mV and 730 mV on unmetallized solar cells. After high-temperature metallization, we achieve 22% efficiency on solar cells with selective poly-Si fingers on the front. We further develop the model for biPoly™ solar cells and with the help of a detailed loss analysis and simulations, identify the various loss components to identify the device modifications required for efficiency improvements.
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