Effects of alloying elements on diamond/Cu interface properties based on first-principles calculations

Diamond/copper composites with high thermal conductivity and a variable thermal expansion coefficient are promising materials for thermal management applications. However, achieving the desired thermal conductivity of the composite material is difficult due to detachment or weak bonding between diamond and Cu. The interfacial properties of diamond/Cu composites can be improved using metal matrix alloying methods. In this study, we investigate the effects of alloying elements (B, Cr, Hf, Mo, Nb, Si, Ti, V, Zr) on the interfacial properties of diamond/Cu using first-principles calculations. Results showed that all alloying components could increase the interfacial bonding of diamond/Cu. Analysis of the electronic structure revealed that increased interfacial bonding strength after doping was the result of the stronger bonding of the alloying element atoms to the C atoms. The C atoms in the first layer of diamond at the interface formed wave peaks near the Fermi energy level after doping with B or Si atoms, facilitating electron-phonon interaction at the interface. The phonon properties of B4C and SiC were similar to those of diamond, which facilitated phonon-phonon coupling. B and Si were shown to be better alloying elements when interfacial bond strength and heat transfer were considered.