Application of IBE etching process in EBAPS device

Electron bombardment active pixel sensor (EBAPS) is a new type of night vision imaging digital device. It has outstanding characteristics such as all-weather, small size, light weight, and large dynamic range, which has attracted widespread attention in the fields of biological detection, high-energy physics, and low-light night vision imaging. In this paper, an EBAPS device for low-light imaging was prepared, the APS image sensor chip was etched and backside grinded by ion beam etching (IBE) equipment. Taguchi's experimental design was used to investigate the effects of IBE etching energy, beam current and angle on the surface roughness and etching depth of the passivation film layer on the surface of APS image sensor. The electron bombardment imaging under 5×10-⁵lx illumination is realized by applying the most effective process parameters to EBAPS devices.