宽带
功率分配器和定向耦合器
光电子学
绝热过程
硅光子学
材料科学
光子学
硅
光学
混合耦合器
光子集成电路
物理
热力学
作者
Xiang Liu,Yingxuan Zhao,Zhen Sheng,Fuwan Gan
出处
期刊:IEEE Photonics Technology Letters
[Institute of Electrical and Electronics Engineers]
日期:2024-03-25
卷期号:36 (10): 637-640
标识
DOI:10.1109/lpt.2024.3381826
摘要
An ultra-broadband and compact 3-dB power splitter has been designed and fabricated using an adiabatic rib silicon waveguide on the silicon-on-insulator (SOI) platform. This device primarily consists of two tapered rib waveguides to facilitate mode evolution for the transverse electric (TE) mode. The results demonstrate that the proposed device can achieve a 150 nm bandwidth in the wavelength range from 1450 nm to 1600 nm for 3-dB power splitting. In addition, the mode evolution footprint is significantly reduced to 78 μm with an excess loss of less than 0.18 dB. This proposed device offers a notable trade-off of device performance for power splitters. With multiple performance metrics, the rib waveguide-based adiabatic directional coupler exhibits significant potential for application in high-density photonic integrated chips (PICs).
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