Flexible Resistive Memory Device with Egg-Albumen/HfOx Hybrid Bilayer: Fabrication and Modeling of its Switching Variations

Abstract Egg-albumen, a natural polymer, in bilayer combination with ultrathin HfO x is explored as an active switching layer component in flexible resistive random access memory devices. The fabricated devices have shown excellent switching characteristics with a current on/off ratio of greater than 10 4 , stable retention of both low resistance and high resistance states, reliable multiple cycle switching, and very low switching power (with set power as 0.5 µ W and reset power as 3.1 mW). To investigate the electro-mechanical stability, devices were bent with different bending radii and it was found that negligible degradation in device performance was observed until a 5 mm bending radius. Furthermore, a simple mathematical model is used to simulate the devices’ characteristics and the values of fitting parameters were extracted with a root mean square error of less than 4.5%. Moreover, a switching variation was introduced by utilizing variations of the physical parameters, and a near practical physics based mathematical device model was demonstrated which can enable the strengthening of simulation capabilities for exploration of unique flexible resistive memory devices and related circuits.