拓扑绝缘体
轴子
量子反常霍尔效应
物理
凝聚态物理
弗洛奎特理论
绝缘体(电)
范德瓦尔斯力
拓扑(电路)
材料科学
量子霍尔效应
量子力学
磁场
光电子学
粒子物理学
分子
组合数学
数学
非线性系统
暗物质
作者
Tongshuai Zhu,Huaiqiang Wang,Haijun Zhang
出处
期刊:Physical review
日期:2023-02-28
卷期号:107 (8)
被引量:13
标识
DOI:10.1103/physrevb.107.085151
摘要
Floquet engineering is an important way to manipulate the electronic states of condensed matter physics. Recently, the discovery of the magnetic topological insulator MnBi$_2$Te$_4$ and its family provided a valuable platform to study magnetic topological phenomena, such as, the quantum anomalous Hall effect, the axion insulator state and the topological magnetoelectric effect. In this work, based on the effective model and first-principles calculations in combination with the Floquet theory, we reveal that the circularly polarized light (CPL) induces the sign reversal of the Chern number of odd-septuple-layer (SL) MnBi$_2$Te$_4$ thin films. In contrast, the CPL drives the axion insulator state into the quantum anomalous Hall state in even-SL MnBi$_2$Te$_4$ thin films. More interestingly, if the topmost van der Waals gap between the surface layer and the below bulk in MnBi$_2$Te$_4$ films is slightly expanded, a high Chern number $|C|=2$ can be realized under the CPL. Our work demonstrates that the light can induce rich magnetic topological phases in MnBi$_2$Te$_4$ films, which might have potential applications in optoelectronic devices.
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