化学气相沉积
钙钛矿(结构)
光电探测器
基质(水族馆)
平面的
薄膜
材料科学
沉积(地质)
光电子学
化学浴沉积
纳米技术
化学
结晶学
计算机科学
古生物学
地质学
计算机图形学(图像)
海洋学
生物
沉积物
作者
Chandrasekar Perumalveeramalai,Jie Zheng,Yang Wang,Honglian Guo,S.V.N. Pammi,Ravi Mudike,Chuanbo Li
标识
DOI:10.1016/j.cej.2024.152213
摘要
The high-quality monolithic growth of perovskite films with larger grains on any substrate is a challenging task due to the instability of morphology, carrier mobility and chemical stability. In this work, we demonstrated the strategy to grow CsPbBr3 films with micron-sized grains along the (0 0 2) surface by chemical vapor deposition. The structural and optical characterizations have shown that the as-grown CsPbBr3 thin films are compact and packed without pin holes and have excellent optical quality for use in high-performance optoelectronic devices. The planar photodetector with the device configuration Ag/CsPbBr3/Ag shows a high photoresponsivity of 506.32 A/W and a specific detectivity of 8.29 × 1012 Jones at an incident light illumination of 22.3 µW/cm2. On the other hand, the vertically stacked device with ITO/SnO2/CsPbBr3/CuSCN/Ag configuration exhibits a photoresponsivity of 10.13 A/W at 0.05 V bias and 96 mA/W under 0 V bias. Specifically, the response time of the device in planar geometry is 241/205 ms, while the vertically stacked device has a response time of 20.51/21 ms at 0.05 V bias and 20.51/30 ms at 0 V bias. The results provide a new strategy for the growth of high-quality perovskite thin films and their effective application for high-performance optoelectronic devices.
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