High performance self-powered photodetector based on CuBi2O4/MAPbI3 heterostructure

Methylammonium lead halide perovskites have garnered significant consideration for application in numerous optoelectronic devices due to their remarkable physical properties. However, the photoconductivity performance of these organolead halide perovskites is still lower than the conventional Si optoelectronic devices such as photodetectors, which is one of the major barriers to their practical applications. Combining suitable inorganic semiconductors with organolead halide perovskite may provide an alternative route for fabricating photodetectors that are expected to have improved photosensitivity. Here, a high performance self-power photodetector based on CuBi2O4/CH3NH3PbI3 (MAPbI3) heterojunction was synthesized under ambient conditions using the spin-coating technique. The severely reduced peak intensity in PL spectra and short decay time of CuBi2O4/MAPbI3 compared to MAPbI3 indicate efficient charge separation at the interface. The self-powered CuBi2O4/MAPbI3 showed photovoltaic-like effect with a maximum open circuit voltage Vo of ∼0.34 ± 0.02 V under the illumination of 365 nm light with 8.63 μW/cm2 power density. Moreover, CuBi2O4/MAPbI3 heterojunction base photodetector exhibits a high responsivity of ∼0.39 ± 0.04 W/A, a detectivity of ∼1.79 ± 0.17 × 1011 Jones, a fast response speed (rise time ∼ 36 ± 0.14 ms, fall time 81 ± 0.21 ms) and self-powering ability compared to that of MAPbI3 only device. This work offers an effective and feasible way to improve the performance of MAPbI3-based devices for photoelectronic applications.