Tailoring energy-storage performance in antiferroelectric PbHfO3 thin films

Among all dielectrics, antiferroelectric (AFE) materials have attracted wide attention due to the excellent energy-storage performance. In this paper, PbHfO3 (PHO) AFE films were prepared for the first time and the microstructure, AFE property and energy-storage performance were studied. X-ray diffraction analysis indicated that annealing temperature played a key role in the crystallinity and phase composition. Due to the coexistent of fine grains and amorphous phase, PHO AFE films annealed at 650 °C displayed not only optimal energy-storage density and energy efficiency, but also excellent thermal stability and fatigue endurance. Compared with films annealed at 750 °C, the recoverable energy-storage density and energy efficiency in 650 °C annealing samples increased by 50% and 100%, respectively. These results demonstrate that PHO film is a promising candidate for applications in power electronics systems.