漫反射红外傅里叶变换
漫反射
带隙
半导体
微晶
反射率
光学
光谱学
材料科学
无定形固体
功能(生物学)
电子
能量(信号处理)
分析化学(期刊)
化学
光电子学
物理
结晶学
量子力学
冶金
催化作用
光催化
色谱法
生物化学
进化生物学
生物
作者
Salmon Landi,Iran Rocha Segundo,Elisabete F. Freitas,M. I. Vasilevskiy,Joaquim Carneiro,Carlos J. Tavares
标识
DOI:10.1016/j.ssc.2021.114573
摘要
The determination of the optical band gap energy (Eg) is important for optimization of the generation of electron/hole pairs in semiconductor materials under illumination. For this purpose, the classical theory proposed by Kubelka and Munk (K-M) has been largely employed for the study of amorphous and polycrystalline materials. In this paper, the authors demonstrate, step by step, how to use the K-M function and apply it thoroughly to the determination of the Eg of TiO2 semiconductor powder (pressed at different thicknesses) from diffuse reflectance spectroscopy (DRS) measurements. For the sample thicknesses 1–4 mm, Eg values of 3.12–3.14 eV were obtained. With this work it is envisaged a clarification to the procedure of determination of the Eg from the K-M theory and DRS data, since some drawbacks, and misconceptions have been identified in the recent literature. In particular, the widely used practice of determining the Eg of a material directly from the K-M function is found to be inadequate.
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