分子束外延
蓝宝石
外延
光电子学
材料科学
光电探测器
氧气
质量(理念)
光学
化学
纳米技术
物理
图层(电子)
激光器
量子力学
有机化学
作者
Chengyi Tian,Chuanlun Zhang,Jialong Lin,Jie Zhang,Weifeng Yang
出处
期刊:IEEE Sensors Journal
[Institute of Electrical and Electronics Engineers]
日期:2024-03-18
卷期号:24 (9): 14109-14117
被引量:1
标识
DOI:10.1109/jsen.2024.3373252
摘要
In this work, we report on high-quality $\beta $ -Ga2O3 epilayers on sapphire substrates by molecular beam epitaxy (MBE) using ozone and oxygen plasma precursors, respectively. A systematic examination of the surface morphology, nucleation process, and epilayer compositions of the $\beta $ -Ga2O3 epilayers is conducted to elucidate the impact of ozone and oxygen plasma precursors on the growth mechanism. Compared to $\beta $ -Ga2O3 epilayers using ozone precursor, which exhibit a Volmer–Weber growth mode with early stage nucleation gaps, the epilayers using oxygen plasma show a Stranski–Krastanow (S–K) growth mode under the modification of the oxygen plasma. In addition, metal–semiconductor–metal solar-blind photodetectors (PDs) are then constructed using the optimized $\beta $ -Ga2O3 epilayers. The oxygen plasma-grown $\beta $ -Ga2O3 PDs display a dark current of 3.2 nA, a photo-dark current ratio (PDCR) of $2.98\times 10^{4}$ , and a specific detectivity of $6.51\times 10^{{13}}$ Jones, while the ozone-grown $\beta $ -Ga2O3 PDs manifest a low dark current of 7.5 pA, a higher PDCR of $1.31\times 10^{{7}}$ , and a higher specific detectivity of $1.31\times 10^{{15}}$ Jones at 10 V, which originate from the lower oxygen vacancy in ozone-grown $\beta $ -Ga $_{{2}}~\text{O}_{{3}}$ epilayers. This work reveals the heteroepitaxial growth mechanism of $\beta $ -Ga2O3 on sapphire by MBE, offering a facile, cheap, and effective approach for high-performance and large-area solar-blind PDs.
科研通智能强力驱动
Strongly Powered by AbleSci AI