薄膜晶体管
光电子学
材料科学
电极
晶体管
噪音(视频)
无定形固体
接触电阻
可变距离跳频
次声
电子迁移率
分析化学(期刊)
热传导
电气工程
纳米技术
计算机科学
化学
复合材料
工程类
电压
物理
图像(数学)
人工智能
图层(电子)
物理化学
有机化学
色谱法
声学
作者
Yayi Chen,X. Liu,Yuan Liu,Rongsheng Chen,Jianfeng Zhang,Mingchao Wu,Hoi Sing Kwok,Wei Zhong
摘要
Source–drain contacts seriously affect low frequency noise (LFN) in amorphous IZO (a-IZO) thin-film transistors with bilayer ITO/Mo electrodes at cryogenic temperatures. In the range of 7–300 K, electrical and LFN performances of devices are measured, and the temperature dependence of channel resistances (Rch) and contact resistances (Rsd) is also analyzed. The carrier transport transition both occurs in a-IZO channels at 80 K and in ITO/Mo electrodes at 100 K, which causes the variation in Rsd and Rch. Below 80 K, the variable range hopping conduction dominates in the channels and contacts with Rsd/Rch ratio > 1. The LFN measured results indicate that the noise is contact-dominated. At higher temperatures above 120 K, the band conduction dominates in the channel, with Rsd/Rch ratio < 1, and the noise is channel-dominated. The main mechanism of noise transfers from the mobility fluctuation to the carrier number fluctuation. We consider that the contribution of contact noise to total LFN is determined by the Rsd/Rch ratio. This work provides comments for the selection of electrode materials in devices applied to cryogenic integration circuits.
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