Fabrication of silicon nitride based high-Q microring resonators prepared by hot-wire CVD method and their applications to frequency comb generation

Fabrication of silicon nitride (SiN) based high-Q microring resonators prepared by the hot-wire chemical vapor deposition (HWCVD) method is presented. By the virtue of low-stress HWCVD films, no special precautions against crack propagation were required for high confinement waveguide device fabrication. By using an additional annealing process, the intrinsic Q factor in excess of 5 × 10 5 was obtained in the telecommunication C band, and which allowed us to observe frequency comb generation. We also investigated into the anneal temperature dependence of the residual hydrogen concentration in the film as well as the optical properties of the microring resonators.