Pdse2/Mose2: A Promising Vander Waals Hetero Interface for Electronic Applications

The field-effect transistor is a fundamental component of semiconductors and the electronic industry. High On-current and mobility with layer dependant features are required for outstanding FET channel material. Two- dimensional materials are advantageous over bulk materials due to higher mobility, on/off ratio, low tunnelling current, and leakage problems. Moreover, two-dimensional heterostructures provide a better way to tune electrical properties. In this work, we fabricated the PdSe2/MoSe2 heterojunction through mechanical exfoliation method and analysed the electrical response of the PdSe2/MoSe2 interface. Our work finds that heterojunction possesses a better On/Off ratio ~ 5.78 x 105, essential in switching characteristics. Moreover, MoSe2 provides a defect-free interface to PdSe2, resulting in higher On current ~ 10µA and mobility ~ 63.7 cm2V-1s-1, necessary for transistor applications. This work provides insights into the interface formed between the PdSe2 and MoSe2 that can be harnessed in various electronic applications.