异质结
铁电性
材料科学
多铁性
反铁磁性
单层
凝聚态物理
极化(电化学)
半导体
各向异性
密度泛函理论
光电子学
纳米技术
光学
化学
物理
电介质
计算化学
物理化学
作者
Nini Guo,Xiangfei Zhu,Huijie Lian,Tianxia Guo,Zijin Wang,Huiyang Zhang,Xiaojing Yao,Bing Wang,Xiuyun Zhang
标识
DOI:10.1016/j.jallcom.2023.169962
摘要
Multiferroic materials combining magnetic and ferroelectric properties are capable of integrating data storage and processing into a single device, which is promising for next generation electronics. In this work, the electronic and magnetic properties of a multiferroic heterostructure coupled with an antiferromagnetic (AFM) CrMoC2S6 monolayer and a ferroelectric Sc2CO2 monolayer, CrMoC2S6/Sc2CO2, was investigated by density functional theory method. Our results show that the CrMoC2S6 monolayer remains the AFM ordering under both polarization states in Sc2CO2 layer. Interestingly, various electronic properties can be obtained for the CrMoC2S6/Sc2CO2 heterostructure due to the interfacial charge transfer and effective electric field. In the Sc2CO2-P↑ polarization state, the heterostructure is AFM quasi-half metal, and in the Sc2CO2-P↓ state, the heterostructure is transitioned to be AFM semiconductor with type-II band alignments. Furthermore, the electronic property of CrMoC2S6/Sc2CO2 heterostructure can also be switched under external strains. Our study proposes a robust multiferroic candidate enabling the application for nonvolatile electrical control of 2D antiferromagnets.
科研通智能强力驱动
Strongly Powered by AbleSci AI