异质结双极晶体管
跨阻放大器
电感器
电感
比克莫斯
放大器
带宽(计算)
电气工程
双极结晶体管
光电子学
材料科学
计算机科学
电子工程
晶体管
工程类
差分放大器
电压
电信
作者
Prateek Kumar Sharma,Vaibhav Ruparelia,Saurabh Sirohi,Uppili S. Raghunathan,Venkata Vanukuru,Vibhor Jain
标识
DOI:10.1109/bcicts54660.2023.10311051
摘要
Series-peaking inductor is a crucial block in a shunt-feedback Transimpedance amplifier (TIA) used for bandwidth enhancement. Achieving high-quality factor (Q) and high self-resonant frequency (SRF) of on-chip inductors is challenging for large bandwidth TIAs. A higher $f_T$ heterojunction bipolar transistor (HBT) can relax the requirement of series-peaking inductance. Due to the lower inductance value, a high $Q$ and high SRF can be achieved. This paper presents design trade-offs between the series-peaking inductor and HBT device parameters using two different GlobalFoundries SiGe BiCMOS processes 9HP+ (90nm Bulk) and 45nm SiGe (45nm RFSOI). The simulation and measurement results are shown to validate the trade-offs. Measurements show that 45nm SiGe TIAs have 15-25% more bandwidth than 9HP+ TIAs, with a 14-30% reduction in inductance across various device sizes.
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