Low Power and High Performance 4 Stage Cross Connected Charge Pump Using CNTFET

Devices made of carbon nanotubes have inherent benefits for high-performance logic device applications. Novel nanoelectronics applications may be made possible by comprehending the special properties of carbon nanotubes and using them in unconventional designs. Nevertheless, before such applications can be achieved, significantly higher material quality control must be attained and new manufacturing techniques must be devised. This proposed research implies a low-voltage, high-performance charge pump based on the cross-connected technique that might be used with conventional CNTFET devices. It has been analytically designed, constructed, and evaluated using simulations, and experimental measurements, on CNTFET 32nm technology. This research presents a unique approach to designing cross-connected based charge pumps by utilizing field-effect transistors made of carbon nanotubes is presented (CNTFETs). The resultant output voltage of the suggested CNTFET-based cross connected charge pump is 549 mV when there is no load and 501.80 mV is reported at load with PCE of 36% and VCE of 93%. Furthermore, the average peak input power consumption of the CNTFET-based cross-connected charge pump is 35.98 nW. The suggested cross-connected charge pump is found to work more effectively than earlier proposed charge pumps.