Effects of Interface Traps and Hydrogen on the Low-Frequency Noise of Irradiated MOS Devices

A re-evaluation of experimental results within the context of first-principles calculations strongly suggests that interface traps can contribute significantly to low-frequency (1/ f ) noise in irradiated MOS devices. Hydrogen-induced trap activation and passivation are likely origins of the observed fluctuations. Measured and calculated activation energies for hydrogen drift, diffusion, and dissociation are consistent with energetics of 1/ f noise. The dominant noise source is determined by densities of relevant defect precursors, hydrogen concentrations, device processing, and history. When present, hydrogen-induced interface-trap activation and passivation adds to noise due to border traps. These results should help assess and assure the performance and reliability of analog ICs in high radiation environments.