响应度
光电探测器
材料科学
异质结
光电子学
薄膜
外延
热稳定性
比探测率
纳米技术
化学工程
图层(电子)
工程类
作者
Zhiying Zhou,Fengzhou Zhao,Shunli He,Anqi Guo,Dan Tian,Bin Xia,Lichun Zhang
标识
DOI:10.1016/j.jallcom.2023.171573
摘要
Using the thermal evaporation method, highly oriented CsCu2I3 thin films were prepared on GaN and quartz with CuI interlayers by adjusting the ratio of CsI:CuI. The mechanism of the growth of CsCu2I3 thin films on CuI interlayer was investigated. The enhanced CsCu2I3/GaN heterojunction UV photodetectors were constructed using the CsCu2I3 thin films deposited on the GaN epitaxial film with a 5 nm CuI interlayer. The fabricated heterojunction photodetectors demonstrated exceptional self-powered photoresponse characteristics, including a high on/off ratio of 2.5 × 104 at 0 V, peak responsivity of 46.91 mA/W and peak specific detectivity of 3.80 × 1012 Jones at 360 nm. Furthermore, the response speed and air stability of the device were significantly improved. This study presents a new approach for producing highly oriented CsCu2I3 films for stable, high-performance, and environmentally friendly optoelectronic devices.
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