Construction of Embedded Sulfur‐Doped g‐C3N4/BiOBr S‐Scheme Heterojunction for Highly Efficient Visible Light Photocatalytic Degradation of Organic Compound Rhodamine B

Abstract Constructing S‐scheme heterojunction catalysts is a key challenge in visible‐light catalysed degradation of organic pollutants. Most heterojunction materials are reported to face significant obstacles in the separation of photogenerated electron–hole pairs owing to differences in the material size and energy barriers. In this study, sulfur‐doped g‐C 3 N 4 oxidative‐type semiconductor materials are synthesized and then coupled with BiOBr reductive‐type semiconductor to form S‐g‐C 3 N 4 /BiOBr S‐scheme heterojunction. A strong and efficient internal electric field is established between the two materials, facilitating the separation of photogenerated electron‐hole pairs. Notably, in situ XPS proved that after visible light irradiation, Bi 3+ is converted into Bi (3+ɑ)+ , and a large number of photogenerated holes are produced on the surface of BiOBr, which oxidized and activated H 2 O into •OH. •OH cooperated with •O 2 − and 1 O 2 to attack Rhodamine B (RhB) molecules to achieve deep oxidation mineralization. The composite material is designed with a LUMO energy level higher than that of RhB, promoting the sensitization of RhB by injecting photogenerated electrons into the heterojunction, thereby enhancing the photocatalytic performance to 22.44 times that of pure g‐C 3 N 4 . This study provides a new perspective on the efficient degradation of organic molecules using visible light catalysis.