材料科学
锑
缓冲器(光纤)
兴奋剂
硒化物
图层(电子)
结晶度
光电子学
氧化锡
带隙
薄膜
化学工程
纳米技术
冶金
硒
复合材料
工程类
电信
计算机科学
作者
Kangjun Geng,Zhengdong Feng,Tingyu Zhang,Shan Huang,Honcheng Zhu,Bangzhi Shen,Boning Dong,Yan Yan,Sai Jiang,Jianhua Qiu,Huafei Guo
标识
DOI:10.1142/s1793604724510512
摘要
Antimony Selenide (Sb 2 Se 3 ) exhibits potential as a solar energy material owing to its optimal bandgap, lack of toxicity, and abundance of earth abundant elements. Currently, cadmium sulfide (CdS) serves as the predominant buffer layer for Sb 2 Se 3 solar cells. However, the use of CdS hinders environmentally friendly advancement due to the toxic properties of the element cadmium. Hence, the quest for non-toxic buffer layers poses a significant challenge to the further advancement of Sb 2 Se 3 solar cells. In prior research, tin oxide (SnO 2 ) has been explored as a buffer layer. Nonetheless, the efficiency of SnO 2 /Sb 2 Se 3 solar cells was hampered by the rough surface of SnO 2 films and the poor crystallinity of Sb 2 Se 3 films. In this investigation, we enhanced device efficiency by improving the uniformity of the SnO 2 surface and enhancing the crystallinity of Sb 2 Se 3 through spin-coating sulfur (S) onto the SnO 2 film. Detailed examinations were conducted on the structure, optical, and electrical properties of the respective SnO 2 and Sb 2 Se 3 thin films. Ultimately, an efficiency of 3.38% was achieved using the spin-coated S:SnO 2 film, marking an 85% enhancement compared to the baseline device.
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