Comparison of V-I characteristics between conventional MOSFET and novel nanoscale MOSFET using high K dielectric materials

The purpose of this study is to improve the drain current of a metal-oxide-semiconductor field-effect transistor (MOSFET) by using nanotechnology to reduce the oxide thickness from bulk to nanoscale and comparing it with conventional MOSFETs. Conventional and novel nanoscale MOSFETs were selected as a group of 24 samples each. Silicon oxide (SiO2) and hafnium dioxide (HfO2) are the oxide materials of choice for both conventional and nanoscale MOSFETs. The 24 samples were calculated with a pretest power of 80% and an alpha of 0.05. The maximum drain current for the silicon dioxide layer for conventional and nanoscale MOSFETs is 4.16 mA (100 nm thickness) and 8.34 mA (10 nm thickness). For hafnium dioxide as the oxide layer, the maximum currents of conventional MOSFET and nanoscale MOSFET are 36.41mA (100nm thickness) and 72.85mA (10nm thickness), respectively. Analysis independent samples t-test, significance reached 0.000 (p<0.05). The drain current of the new nanoscale MOSFET (average drain current - 40.67 mA) is significantly better than conventional MOSFETs (average drain current - 19.94 mA) with various gate oxide materials and thicknesses.