Microdose Effect of SGT MOSFETs induced by Heavy Ions

The microdose effect of SGT (Shield Gate Trench) MOSFETs under heavy ion irradiation was studied, and the mechanism was further revealed by experiments measurement and TCAD simulations. It was demonstrated that heavy ion irradiation could result in subthreshold current of SGT MOSFETs increasing and threshold voltage negatively drifting. Besides, the degradation of threshold voltage is more serious under negative gate electrode bias in SGT MOSFETs.