Lateral polarity controlled quasi-vertical GaN Schottky barrier diode with sidewalls absence of plasma damages

In this Letter, a high-performance quasi-vertical GaN Schottky barrier diode (SBD) with low leakage current and high on/off ratio based on a unique lateral polarity structure (LPS) is presented. The SBD features with the III-polar domain as the active region and the partially wet etched N-polar domain as the current-spreading region, completely eliminating plasma damages. Compared to the SBD fabricated by the conventional plasma etching technique, the leakage current of the LPS-based SBD is two orders of magnitude lower. A high Ion/Ioff of 107, an ideality factor of 1.04, a breakdown voltage of 290 V, and a critical electric field of 2.1 MV/cm were demonstrated for the proposed structure.