材料科学
堆积
钙钛矿(结构)
毫米
光电子学
X射线
纳米技术
光学
结晶学
核磁共振
化学
物理
作者
Tianxiang Sun,Shengdan Xie,Ning Li,Xiaomei Jiang,Xiao Cheng,Yucheng Liu,Xutang Tao,Shengzhong Liu,Zhaolai Chen
标识
DOI:10.1002/adfm.202314218
摘要
Abstract Metal halide perovskite single crystals are promising for hard X‐ray detection, but growth of large‐sized thin single crystals and inhibition of halide ion migration under high bias are challenging. Herein, the preparation of dense stacking of oriented millimeter‐sized perovskite single crystals with capability of large‐area fabrication, controlled thickness, and high ion migration activation energy ( E a)is reported. The oriented growth results in absence of grain boundaries parallel with the substrates, leading to large carrier mobility‐lifetime ( µτ ) product of 2.7 × 10 −3 cm 2 V −1 , which is comparable to values of many perovskite bulk single crystals. Under low bias, hard X‐ray detectors exhibit high sensitivity of 1.2 × 10 4 µC Gy −1 cm −2 and low detection limit of 87.5 nGy s −1 , which are comparable to those of many single‐crystal hard X‐ray detectors under high bias. Moreover, combination of low bias and high E a results in weak halide ion migration and small dark current drift of 3.2 × 10 −4 nA cm −1 s −1 v −1 . Benefited from the superior detector performance, high‐contrast hard X‐ray imaging can be obtained at a low dose rate of 1.26 µGy s −1 . The work may promote the application of perovskite hard X‐ray detectors in practical imaging area.
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