电感器
CMOS芯片
低噪声放大器
多波段设备
无线电频率
噪声系数
电气工程
放大器
材料科学
电子工程
光电子学
计算机科学
工程类
电压
天线(收音机)
作者
Nicolás Wainstein,Tamir Tsabari,Yarden Goldin,Eilam Yalon,Shahar Kvatinsky
标识
DOI:10.1109/isvlsi.2019.00060
摘要
The growing demand for multi-band and multi-standard wireless devices requires flexible architectures that can reutilize the different blocks in the RF chains to reduce size and power consumption. The traditional multi-band radio with an RF chain per band is no longer scalable. Memristive devices have shown excellent performance as RF switches and also have a small footprint. Furthermore, as they are fabricated in the back-end of line of CMOS process, they enable tunability to integrated spiral inductors. In this paper, we present the design and simulations of a dual-band (2.4 GHz and 5 GHz) source degenerated low-noise amplifier (LNA) using memristive-via switched tunable inductors. Owing to the tunable inductor, the dual-band LNA has negligible area overhead compared to its single-band sibling. The LNA is designed using a 0.18-μm RF CMOS technology and achieves a gain of 18.8 dB and 10.3 dB at 2.4 GHz and 5 GHz, respectively, and a noise figure (NF) below 2.3 dB at both bands. In addition, we present a semi-automated design methodology for the tunable inductors.
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