Rapidly Thinning Silicon Carbide By Anodization

SiC is a semiconductor material used to fabricate electronic devices that can operate under severe conditions, such as high temperatures, and which have some advantages over silicon-based devices (for example, high frequency and high power). The hardness of SiC is quite high (Mohs=9.5) and strong chemically inert, making it difficult be thinned. Up to now, since the majority carriers of n-type SiC are electrons, its application is more extensive, but it is also more difficult to thin. An effective etching method is by the reactive ion etching (RIE) method, which may produce satisfactory results in a smooth surface. In addition, according to reports, an efficiently etching processing can be performed by a high temperature (>700 C) molten alkali metal hydroxide (for example, NaOH). However, the equipment cost, operation convenience and thinning speed of these etching approaches are not as well as electrochemical etching, i.e., anodization. However, n-type SiC is very difficult to be anodized because of the lack of electric holes which are the key species for etching. In our report, we used a wafer bonding processing to form a temporary p-n junction by jointing to a p-type silicon, so that minority carriers, electric holes, in the mated p-type silicon can easily transfer to the SiC surface via a bias, resulting in a HF-based electrochemical etching. By the processing, the n-type SiC can be quickly thinned. After thinning, the p-type silicon subatrate can be easily removed without the chemical contamination on the thinned SiC substrate. Figure: The anodized surface of n-type SiC. Figure 1