Electronic properties of Borophene/InSe van der Waals heterostructures

In this work, we investigate the electronic properties of the Van der Waals heterojunctions based on InSe and borophene (Δ and χ3) by the first principle calculations. The orbital hybridizations can affect the electronic structures of InSe and boropheneΔ in heterostructure. The calculated tunneling barriers and the Schottky barriers indicate that the designed devices have good electronic transport. It is found that the Ohmic contact can be achieved by changing the interlayer distance. In addition, the external electric field can modulate the Schottky contact type and Schottky barriers height. The results can provide useful insight in high-performance devices based on the Borophene/InSe heterostructure.