材料科学
光电探测器
光电效应
带隙
拉曼光谱
热液循环
光电子学
可见光谱
半导体
硒化物
纳米技术
光学
化学工程
硒
工程类
物理
冶金
作者
Jing Wang,Sajid Ur Rehman,Yang Xu,Binzhou Zuo,Haohang Cheng,Lingshan Guo,Bin Zou,Xiaoming Zhang,Chuanbo Li
出处
期刊:Solar Energy
[Elsevier]
日期:2022-02-01
卷期号:233: 213-220
被引量:14
标识
DOI:10.1016/j.solener.2022.01.019
摘要
Two-dimensional Sb2Se3 is a p-type semiconductor material, a prominent member of VA-VIA group, which has drawn widespread attention due to stable structure, excellent optoelectronic and photoelectric properties as compared to its bulk counterpart. In current work, Sb2Se3 nanosheets are synthesized for the first time by highly facile hydrothermal method. The antimony triselenide nanosheets morphology is investigated by XRD, SEM, Raman, TEM and AFM analysis. Majority of 2D nanosheets are rectangles and parallelograms, having length, width, and thickness from 2 to 16 μm, 1 to 8 μm, and 17 to 40 nm respectively. The phonon dispersion reveals that Sb2Se3 nanosheets are thermodynamically stable. The bandgap of as-synthesize nanosheets, by analysis of absorption spectra, is calculated to be ∼ 1.55 eV which is well consistent with our first principles calculations (1.58 eV). The photoelectric characteristics of fabricated nanosheets are explored by developing a film-based photodetector, which shows a better response to visible-light with an “ON/OFF” ratio of 10.8 with short response/recovery times (0.40/0.12 s) and long-term durability. The electric current of Sb2Se3 nanosheets based photodetector has shown significant improvement in both dark and under light illumination. Current study could be a crucial move in promoting Sb2Se3 nanosheets based semiconductors for high performance optoelectronic applications.
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