薄膜晶体管
材料科学
硅
多晶硅
光电子学
电子迁移率
晶体管
电导
场效应
热传导
频道(广播)
降级(电信)
场效应晶体管
阈值电压
电子工程
电气工程
凝聚态物理
电压
纳米技术
复合材料
图层(电子)
物理
工程类
作者
Mingxiang Wang,Man Wong,Xuejie Shi,Dongli Zhang
标识
DOI:10.1109/icsict.2006.306194
摘要
Effective channel mobilities of polycrystalline silicon (poly-Si) thin film transistors (TFTs) have been experimentally extracted by drain conductance and channel charge measured at linear region. It is demonstrated that conventionally followed device field effect mobility is largely deviated from effective channel mobility. Based on a mobility model including both barrier controlled carrier conduction and effective transverse field controlled mobility degradation, our experimental channel mobility data can be reproduced for both low temperature and high temperature recrystallized poly-Si TFTs, without introducing any empirical or artificial factors
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