量子点
光电子学
异质结
材料科学
量子点太阳电池
多激子产生
太阳能电池
图层(电子)
缓冲器(光纤)
能量转换效率
量子点激光器
纳米技术
聚合物太阳能电池
半导体
电气工程
半导体激光器理论
工程类
作者
Tianshuo Zhao,E. D. Goodwin,Jiacen Guo,Han Wang,Benjamin T. Diroll,Christopher B. Murray,Cherie R. Kagan
出处
期刊:ACS Nano
[American Chemical Society]
日期:2016-09-22
卷期号:10 (10): 9267-9273
被引量:70
标识
DOI:10.1021/acsnano.6b03175
摘要
Advanced architectures are required to further improve the performance of colloidal PbS heterojunction quantum dot solar cells. Here, we introduce a CdI2-treated CdSe quantum dot buffer layer at the junction between ZnO nanoparticles and PbS quantum dots in the solar cells. We exploit the surface- and size-tunable electronic properties of the CdSe quantum dots to optimize its carrier concentration and energy band alignment in the heterojunction. We combine optical, electrical, and analytical measurements to show that the CdSe quantum dot buffer layer suppresses interface recombination and contributes additional photogenerated carriers, increasing the open-circuit voltage and short-circuit current of PbS quantum dot solar cells, leading to a 25% increase in solar power conversion efficiency.
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