跨导
绝缘体上的硅
辐照
材料科学
光电子学
阈值电压
阈下传导
硅
阈下斜率
泄漏(经济)
分析化学(期刊)
电气工程
物理
电压
晶体管
化学
核物理学
工程类
宏观经济学
经济
色谱法
作者
T. D. Haeffner,Robert A. Reed,Ronald D. Schrimpf,Daniel M. Fleetwood,Ryan Frederick Keller,Rong Jiang,Brian D. Sierawski,Michael W. McCurdy,D. Linten,M. W. Rony,Dennis R. Ball,Michael L. Alles
出处
期刊:IEEE Transactions on Nuclear Science
[Institute of Electrical and Electronics Engineers]
日期:2019-06-01
卷期号:66 (6): 911-917
被引量:31
标识
DOI:10.1109/tns.2019.2909720
摘要
Bulk and silicon-on-insulator (SOI) n-channel FinFETs with fin widths of 15-40 nm and channel lengths of 45 and 1000 nm were irradiated with 1.8 MeV protons at temperatures of 295 and 90 K. Bulk and SOI FinFETs show improved transconductance and steeper subthreshold slopes before irradiation at 90 K than at 295 K. Increased off-state leakage currents are observed for longer channel bulk FinFETs for doses above 300-500 krad (SiO 2 ) for 295 and 90 K irradiation, and at lower doses for shorter channel devices. Threshold-voltage shifts for irradiation up to 1 Mrad(SiO 2 ) are greater for SOI devices at 90 K than at 295 K due to enhanced charge trapping in the buried oxide (BOX). TCAD simulations provide insight into radiation-induced trapped-charge densities in the SOI devices.
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