材料科学
开路电压
钙钛矿(结构)
费米能级
电压
重组
扩散
原子物理学
饱和(图论)
无辐射复合
光电子学
凝聚态物理
热力学
物理
半导体
化学
核物理学
结晶学
半导体材料
电子
组合数学
基因
量子力学
生物化学
数学
作者
Pietro Caprioglio,Martin Stolterfoht,Christian Wolff,Thomas Unold,B. Rech,Steve Albrecht,Dieter Neher
标识
DOI:10.1002/aenm.201901631
摘要
Abstract Today's perovskite solar cells (PSCs) are limited mainly by their open‐circuit voltage ( V OC ) due to nonradiative recombination. Therefore, a comprehensive understanding of the relevant recombination pathways is needed. Here, intensity‐dependent measurements of the quasi‐Fermi level splitting (QFLS) and of the V OC on the very same devices, including pin‐type PSCs with efficiencies above 20%, are performed. It is found that the QFLS in the perovskite lies significantly below its radiative limit for all intensities but also that the V OC is generally lower than the QFLS, violating one main assumption of the Shockley‐Queisser theory. This has far‐reaching implications for the applicability of some well‐established techniques, which use the V OC as a measure of the carrier densities in the absorber. By performing drift‐diffusion simulations, the intensity dependence of the QFLS, the QFLS‐ V OC offset and the ideality factor are consistently explained by trap‐assisted recombination and energetic misalignment at the interfaces. Additionally, it is found that the saturation of the V OC at high intensities is caused by insufficient contact selectivity while heating effects are of minor importance. It is concluded that the analysis of the V OC does not provide reliable conclusions of the recombination pathways and that the knowledge of the QFLS ‐V OC relation is of great importance.
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