量子点
氟化锂
光电子学
量子隧道
材料科学
发光二极管
二极管
锂(药物)
激子
图层(电子)
量子效率
电子
猝灭(荧光)
化学
纳米技术
光学
无机化学
荧光
物理
凝聚态物理
内分泌学
医学
量子力学
作者
Xiangwei Qu,Nan Zhang,Rui Cai,Bonan Kang,Shuming Chen,Bing Xu,Kai Wang,Xiao Wei Sun
摘要
Unlike green and red quantum dot light-emitting diodes (QLEDs), electron injection is not sufficient for blue QLEDs due to a higher potential barrier at the quantum dot (QD)/ZnO interface. In this work, a lithium fluoride (LiF) interlayer is inserted between ZnO and the quantum dot layer to improve the efficiency and stability of blue QLEDs. The LiF interfacial layer facilitates electron injection into QDs through the electron tunneling effect and suppresses the exciton quenching at the QD/ZnO interface. As a result, the blue QLED devices show the maximum external quantum efficiency and current efficiency of 9.8% and 7.9 cd A−1, respectively, which are 1.45 times and 1.39 times, respectively, higher than those of control devices. The operational lifetime of devices is also improved by two times. Our works indicate that interface engineering is an effective method for high efficiency and stable blue QLEDs.
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