High performance resistive memory device based on highly stable layered CsPb2Br5 perovskite polymer nanocomposite

The rapid growth of information technology and data processing in recent times has immensely increased the research surge for the efficient data storage devices. The state of the art resistive memory technology is keen to deliver in high density storage along with fast programming. In this work, we have fabricated a resistive memory device using 2D perovskite-polymer nanocomposite as the functional layer, where aluminum (Al) and indium tin oxide (ITO) has been employed as top and bottom electrodes respectively. The polymer nanocomposite device with moderate level of perovskite nanosheets concentration demonstrated significant resistive switching properties having maximum current ON/OFF ratio of 104 with switching voltages of± 1.5 V. Moreover, the endurance upto 103 cycles and the data retention upto 104 s without any severe degradation show the uniformity and reproducibility of the resistive memory device. The Al/PMMA/CsPb2Br5/PMMA/ITO device has also exhibited multi-level storage capability programmed under controlled compliance current (CC), which assures the high-density storage. In addition, the proposed device has also demonstrated long-term stability even after 15 days of fabrication process and no deprivation in the resistance state could be observed. Finally, the charge transport mechanism is illustrated on the basis of bipolar switching curves with the help of energy band diagram and the role CsPb2Br5 perovskite has been discussed as the charge trapping/de-trapping centers.