空间电荷
电介质
材料科学
量子隧道
俘获
电荷(物理)
纳米颗粒
电场
示意图
电压
航程(航空)
存水弯(水管)
化学物理
纳米技术
光电子学
电气工程
复合材料
物理
工程类
气象学
电子
生物
量子力学
生态学
作者
George Chen,Shengtao Li,Lisheng Zhong
标识
DOI:10.1109/icpadm.2015.7295202
摘要
Nanodielectrics have been actively investigated in last two decades as they have shown some improved dielectric properties that are important for high voltage insulation applications. One of these improvements is the reduction in space charge when the nanodielectrics are subjected to dc electric fields. The formation of deep trap after introducing nanoparticles in the material has been widely reported. However, the mechanisms that are responsible for the charge suppression are not detailed. More importantly, the effect of charge suppression is strongly dependent on the amount of nanoparticles, i.e. loading concentration. In the present paper, a schematic model has been proposed based on deep trap concept. A tunneling process has been introduced when the trapping sites become closer which is the case for high nanofillers concentration. Based on the new model, charge formation and dynamics in nanodielectrics with different loading concentrations can be estimated and electrical performance anticipated. A range of factors that can influence charge trapping/detrapping have been discussed.
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