The reliability of FeRAMS with 2T/2C or 1T/1C type cell structure

Abstract Ferroelectric Random Access Memory (FeRAM) provides some advantages such as non-volatility, high endurance on write/read cycles, high radiation hardness and low power consumption compared to conventional memories. However, in order to realize a commercial FeRAM, it is important to overcome the limitation in various reliability items such as retention, imprint, and fatigue failure at high operation temperature. In this paper, the retention characteristic of FeRAM related with imprint degradation of ferroelectric capacitors at high temperature is evaluated on the level of 8” wafer. Both cell configurations of 2T/2C and 1T/1C are discussed in terms of imprint reliability. General reliability items of the FeRAM after TSOP-I type package, such as fatigue endurance, early failure rate (EFR), humidity acceleration stress test (HAST), and temperature cycle (TC), are also evaluated.