Detailed band structure for 3C-, 2H-, 4H-, 6H-SiC, and Si around the fundamental band gap

Electron and hole effective masses for the polytypes 3C-, 2H-, 4H-, and 6H-SiC have been calculated within the framework of the local density approximation including spin-orbit interaction. To establish the accuracy of the approximations, effective masses for both electrons and holes in Si have also been calculated. It is found that the agreement with well-established experimental values is excellent both for Si and SiC. The valence bands have been parametrized in terms of k\ensuremath{\cdot}p parameters. \textcopyright{} 1996 The American Physical Society.